ST12N10D n channel enhancement mode mosfet 12.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST12N10D 2009. v1 description ST12N10D is the n-channel logic enhancement mode po wer field effect transistor which is produced using high cell density, dmos tre nch technology. the ST12N10D has been designed specially to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 part marking y: year code a: produce code o: process code feature 100v/12.0a, r ds(on) = 170m(typ.) @v gs = 10v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability to-252 package design
ST12N10D n channel enhancement mode mosfet 12.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST12N10D 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage vdss 100 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=100 id 12.0 6.0 a pulsed drain current idm 50 a continuous source current (diode conduction) is 15 a power dissipation ta=25 pd 79 w operation junction temperature tj 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient rja 110 /w
ST12N10D n channel enhancement mode mosfet 12.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST12N10D 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,id=250ma 100 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =100v,v gs =0v 12 zero gate voltage drain current i dss v ds =80v,v gs =0v t j =150 5.0 ua on-state drain current i d(on) v ds R 5v,v gs =10v 50 a drain-source on- resistance r ds(on) v gs =10v,i d =16a 170 180 m forward transconductance gfs v ds =50v,i d =9.0a 6.4 s diode forward voltage v sd i s =9.0a,v gs =0v 1.2 v dynamic total gate charge q g 45 gate-source charge q gs 7.2 gate-drain charge q gd v ds =80v,v gs =10v i d 9.0a 22 nc input capacitance c iss 640 output capacitance c oss 160 reverse transfercapacitance c rss v ds =25v,v gs =0v f=1mhz 88 pf 7.4 turn-on time t d(on) tr 29 40 turn-off time t d(off) tf v dd =50v,r d = 5.5 i d =9.0a,v gen =10v r g =12 25 ns
ST12N10D n channel enhancement mode mosfet 12.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST12N10D 2009. v1 typical characterictics
ST12N10D n channel enhancement mode mosfet 12.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST12N10D 2009. v1 typical characterictics
ST12N10D n channel enhancement mode mosfet 12.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST12N10D 2009. v1 to-252-2l package outline sop-8p
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